ELSF-511SYGWA/S530-E2 Features
(1)Packaged in tape and reel for SMT manufacturing.
(2)Design flexibility(common cathode or anode).
(3)Categorized for luminous intensity.
(4)The thickness is thinness than tradition display.
(5)Pb free
(6)The product itself will remain within RoHS compliant version
 

ELSF-511SYGWA/S530-E2 Descriptions
     The SMD type is much smaller than tradition type components, thus enable smaller board size, higher packing density, reduced storage space and finally smaller equipment to be obtained.
 

ELSF-511SYGWA/S530-E2 Applications
(1)Suitable for indoor use.
(2)Audio system.
(3)Set top box.
(4)Game machine.
(5)Channel indicator of TV.

ELSF-511SYGWA/S530-E2 Absolute maximum ratings at Ta = 25℃：

Forward Current IF 25 mA

IF(Peak) 60 mA, Peak Forward Current(Duty 1/10 @ 1KHZ)

Operating Temperature Topr -40 to +85 ℃

Storage Temperature Tstg -40 to +100 ℃

Soldering Temperature Tsol 260 ± 5 ℃

Electrostatic Discharge ESD 2000 V

Power Dissipation Pd 60 mW

Reverse Voltage VR 5V

ELSF-511SYGWA/S530-E2 Electronic optical characteristics : 

Luminous Intensity (Per segment)----Min4.0~(Typ)10.8 ---- IF=10mA

uminous Intensity (Per decimal point)----Min2.4~(Typ) 4.9 ---- IF=10mA

Peak Wavelength λp ---- (Typ)575 nm----IF=20mA 

Dominant Wavelength λd ---- (Typ)573 nm----IF=20mA

Spectrum Radiation  Bandwidth △λ ---- (Typ)20nm----IF=20mA

Forward Voltage VF ----(Typ) 2.0~Max2.4V----IF=20mA 

Reverse Current IR ---- Max100 μA---- VR=5V